unisonic technologies co., ltd utt100n06 p ower mosfet www.unisonic.com.tw 1 of 3 copyright ? 2 0 1 3 unisonic technologies co., ltd qw - r502 - 509 . c n - channel enhancement mode power mosfet ? description the utc utt100n06 is an n - channel enhancement mode power fet us ing utc ? s advanced technology to provide c u st o mers with a minimum on - state resistance and superior switching performance. i t also can withst and high energy pulse in the avalanche and commutation mode. ? features * fast s witching speed * 1 0 0 a, 60 v, r ds(on) = 7 m @ v gs =10v * work below 175c * 100% a valanche t ested * improved dv/dt c apability ? symbol 1.gate 3.source 2.drain to-220 1 ? ordering information order ing number package pin assign ment packing lead free halogen free 1 2 3 u tt100n06 l - t a3 - t utt100n06 g -t a3 - t to -220 g d s tube note : pin assignment: g: gate d: drain s: source UTT100N06L-TA3-T (1)packing type (2)package type (3)lead free (1) t: tube (2) ta3: to-220 (3) g: halogen free, l: lead free
utt100n06 p ower mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw - r502 - 509 . c ? absolute maximum ratings ( t j =25 c , unless otherwise specified ) parameter symbol ratings unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v drain current continuous i d 1 0 0 a pulsed i dm 400 a avalanche energy single pulsed e as 450 mj peak diode recovery dv/dt dv/dt 6 v/ns power dissipation p d 1 00 w junction temperature t j +1 50 c storage temperatu re t stg - 55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? thermal characteristics paramete r symbol ratings unit junction to ambient ja 62 .5 c /w junction to case jc 1.5 c /w ? electrical character istics ( t j =25 c , unless otherwise specified ) parameter symbol test conditions min typ max unit off characteristics drain - source breakdown voltage bv dss i d = 250 a, v gs =0v 60 v dr ain - source leakage current i dss v ds = 60 v, v gs =0v 10 a gate - source leakage current forward i gss v gs = + 2 0v, v ds =0v + 10 0 na reverse v gs = - 2 0v, v ds =0v - 10 0 na on characteristics gate threshold voltage v gs (th) v ds =v gs , i d =250a 1 3 v static dra in - source on - state resistance r ds( on ) v gs =10v, i d = 5 0a 7 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 12900 pf output capacitance c oss 1060 pf reverse transfer capacitance c rss 700 pf switching parameters total gate charge q g v g s = 10 v, v ds = 3 0v, i d =1 00a 500 nc gate to source charge q gs 50 nc gate to drain charge q gd 33 nc turn - o n delay time t d(on) v dd = 30v, vgs=10v, i d P1 0 0a , r g = 0.4 ? 90 ns rise time t r 130 200 ns turn -o ff delay time t d(off) 768 ns fall - time t f 280 420 ns transconductance g fs v d s =15v , i d = 3 0a 30 s source - drain diode ratings and characteristics maximum body - diode continuous current i s 1 0 0 a maximum body - diode pulsed current i sm 4 0 0 a drain - source diode forward voltage v sd i s = 1 0 0 a, v gs =0v 1.0 1.5 v resistance o f gate r g 0.65 1.3 2 ?
utt100n06 p ower mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw - r502 - 509 . c ? typical characteristics drain current vs. drain-source breakdown voltage drain current , i d (a) drain-source breakdown voltage , bv dss (v) 0.5 0 drain current vs. gate threshold voltage drain current , i d (a) gate threshold voltage, v th (v) 1.5 2 3 1 2.5 0 50 100 150 200 250 300 0 14 42 56 70 28 0 50 100 150 200 250 300 drain -source on-state resistance characteristics drain current , i d (a) drain to source voltage , v ds (v) 0 20 60 0 0.05 0.1 0.15 0.2 v gs =10v, i d =50a 10 30 40 0.3 0 drain current vs . source to drain voltage source to drain voltage, v sd (v) drain current , i d (a) 0.2 0.4 0.6 0.8 1.2 0 20 40 60 100 120 0.25 50 80 1.0 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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